Organic thin film transistors with double insulator layers

被引：8
|
作者：
Liu, X. [1 ]
Bai, Y.
Chen, L.
Wei, F. X.
Zhang, X. B.
Jiang, X. Y.
Zhang, Zh. L.
机构：
[1] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China
[2] Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China
来源：
MICROELECTRONICS JOURNAL | 2007年 / 38卷 / 8-9期
基金：
中国国家自然科学基金;
关键词：
organic thin film transistor; PMMA; mobility; on/off ratio;
D O I：
10.1016/j.mejo.2007.04.014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated a double-layer structured gate dielectric for the organic thin films transistor (OTFT) with the purpose of improving the performance of the SiO2 gate insulator. A 50 nm PMMA layer was coated on top of the SiO2 gate insulator as organic insulator layer. The results demonstrated that using inorganic/organic compound insulator as the gate dielectric layers is an effective method to fabricate OTFTs with improved electric characteristics and decreased leakage current. Electrical parameters such as carrier mobility and on/off ratio by field effect measurement have been calculated. OTFT based on highly doped Si substrate with a field-effect mobility of 0.004 cm(2)/V s and on/off ratio of 10(4) have been obtained. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：919 / 922
页数：4
相关论文
共 50 条
  • [21] Organic thin-film transistors with low-temperature AlN film as gate insulator
    Zan, Hsiao-Wen
    Yen, Kuo-Hsi
    Chen, Chien-Hsun
    Liu, Pu-Kuan
    Ku, o-Hsin Ku
    Hwang, Jennchang
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (01) : H8 - H10
  • [22] Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering
    Yen, Kuo-Hsi
    Zan, Hsiao-Wen
    Ko, Chueh-Ping
    Liu, Pu-Kuan
    Chang, Tzu-Yueh
    Su, Kuo-Hai
    Wei, Chiung-Sheng
    Lee, Po-Tsung
    Chen, Chien-Hsun
    Yeh, Chun-Ming
    Hwang, Jennchang
    PROCEEDINGS OF THE TWENTY-FIFTH INTERNATIONAL DISPLAY RESEARCH CONFERENCE - EURODISPLAY 2005, 2005, : 56 - 58
  • [23] Organic thin film transistors
    Reese, Colin
    Roberts, Mark
    Ling, Mang-mang
    Bao, Zhenan
    MATERIALS TODAY, 2004, 7 (09) : 20 - 27
  • [24] On the crucial role of the insulator-semiconductor interface in organic thin-film transistors
    Horowitz, Gilles
    Mottaghi, Mohammad
    Lang, Philippe
    Rodriguez, Fernand
    Yassar, Abderrahim
    Lenfant, Stephane
    Vuillaume, Dominique
    ORGANIC FIELD-EFFECT TRANSISTORS V, 2006, 6336
  • [25] Gate Insulator Morphology-Dependent Reliability in Organic Thin-Film Transistors
    Chen, Hua-Mao
    Chang, Ting-Chang
    Tai, Ya-Hsiang
    Chiang, Hsiao-Cheng
    Liu, Kuan-Hsien
    Chen, Min-Chen
    Huang, Cheng-Chieh
    Lee, Chao-Kuei
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (02) : 228 - 230
  • [26] Effect of pentacene thickness on organic thin film transistors: Role of pentacene/insulator interface
    Gupta, Dipti
    Katiyar, M.
    Deepak
    PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 594 - 597
  • [27] Electrical characteristics of pentacene organic thin film transistors with silicon dioxide gate insulator
    Choi, JS
    Kim, DY
    Lee, JH
    Kang, DY
    Kim, YK
    Shin, DM
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2000, 349 : 339 - 342
  • [28] All-organic thin-film transistors using photoacryl as a gate insulator
    Kim, YM
    Pyo, SW
    Kim, YS
    Shim, JH
    Suh, CH
    Kim, YK
    OPTICAL MATERIALS, 2003, 21 (1-3) : 425 - 428
  • [29] Copper phthalocyanine organic thin-film transistors with calcium fluoride gate insulator
    Yu, Shunyang
    Yi, Mingdong
    Ma, Dongge
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (10) : 1452 - 1454
  • [30] Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator
    Zan, Hsiao-Wen
    Yen, Kuo-Hsi
    Liu, Pu-Kuan
    Ku, Kuo-Hsin
    Chen, Chien-Hsun
    Hwang, Jennchang
    ORGANIC ELECTRONICS, 2007, 8 (04) : 450 - 454
12345