Strain effects on photoluminescence polarization of InAs/GaAs self-assembled quantum dots

被引：4
|
作者：
Jayavel, P
Tanaka, H
Kou, K
Kita, T
Wada, O
Ebe, H
Nakata, Y
Sugawara, M
机构：
[1] Kobe Univ, Dept Elect & Elect Engn, Fac Engn, Kobe, Hyogo 6578501, Japan
[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2003年 / 238卷 / 02期
关键词：
D O I：
10.1002/pssb.200303005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have investigated the photoluminescence (PL) polarization properties of InAs/GaAs self-assembled quantum dots (QDs). An 8 nm InxGa1-xAs capping layer was overgrown on InAs QDs in order to modify the strain distribution in the dots. TE and TM mode PL polarizations of samples with capping layer indium composition of x = 0 and x = 0.13 were detected and analyzed. The TE/TM ratio shows heavy-hole dominant optical transition for samples with x = 0. On the other hand, samples with x = 0. 13 show light-hole dominant optical transition. These results indicate valence band state inversion through in-plane strain distribution dependent on the capping layer composition.
引用
收藏
页码：229 / 232
页数：4
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