Ultra-thin GaAs solar cells: radiation tolerance and space applications

被引：0

作者：

Hirst, Louise C. ^{[1
]}

Yakes, Michael K. ^{[1
]}

Warner, Jeffery. H. ^{[1
]}

Bennett, Mitchell F. ^{[2
]}

Schmieder, Kenneth J. ^{[1
]}

Tomasulo, Stephanie ^{[1
]}

Cleveland, Erin ^{[1
]}

Maximenko, Sergey ^{[1
]}

Moore, James ^{[3
]}

Walters, Robert J. ^{[1
]}

Jenkins, Phillip P. ^{[1
]}

机构：

[1] US Navl Res Lab, 4555 Overlook Ave, Washington, DC 20375 USA

[2] Sotera Def Solut Inc, Annapolis Jct, MD 20701 USA

[3] George Washington Univ, 2121 1 St NW, Washington, DC 20037 USA

来源：

2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2017年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Radiation tolerance is a critical concern for space power applications. In this paper we demonstrate intrinsic radiation tolerance in ultra-thin (<100nm) GaAs devices, without the need for heavy, rigid coverglass. It is shown that in the ultra-thin geometry carrier collection efficiency and corresponding short circuit current do not degrade in the presence of radiation induced defects. By employing scattering structures for light management solar absorption can be compensated in an ultra-thin film to exploit this intrinsic radiation tolerance and enable new mission profiles in challenging space environments.

引用

页码：2091 / 2093

页数：3

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