Nitride-based LEDs with p-InGaN capping layer

被引：54

作者：

Chang, SJ ^{[1
]}

Chen, CH

Chang, PC

Su, YK

Chen, PC

Jhou, YD

Hung, H

Wang, SM

Huang, BR

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan

[4] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Touliu 640, Taiwan

[5] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 640, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 12期

关键词：

capping layer; electroluminescence (EL) intensity; hole concentration; InGaN; light-emitting diodes (LED); operation voltage;

D O I：

10.1109/TED.2003.820131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based light-emitting diodes (LEDs) with Mg-doped In0.23Ga0.77N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In0.23Ga0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In0.23Ga0.77N layer on top of the p-GaN layer. Furthermore it was found that output intensity of LEDs with In0.23Ga0.77N capping layer was much larger, particularly at elevated temperatures.

引用

页码：2567 / 2570

页数：4

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