Geometry Pattern for the Wire Organic Electrochemical Textile Transistor

被引:36
|
作者
Tao, Xuyuan [1 ,2 ]
Koncar, Vladan [1 ]
Dufour, Claude [2 ]
机构
[1] GEMTEX, Ecole Natl Super Arts & Ind Text, F-59056 Roubaix, France
[2] Univ Sci & Tech Lille Flandres Artois, IEMN CNRS UMR 8520, F-59652 Villeneuve Dascq, France
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; IONIC LIQUIDS; CARRIER DENSITY; LOW-VOLTAGE; CONDUCTIVITY; DEVICES;
D O I
10.1149/1.3562962
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Polyelectrolytes are promising materials as gate dielectrics in organic electrochemical transistor. On the other side, the fibre form transistor has become one of the most interesting topics in the field of smart textiles. The use of PEDOT:PSS to realize a parallel wire electrochemical textile transistor has been reported. A new geometry pattern makes the transistor easier to insert into textile fabric making the large-scale production possible. The length of transistor can be up to several centimeters. The On/Off ratio reached up to 10(3). The switch time is near 15 s. An inverter circuit and a NOR-gated circuit have been realized by wire electrochemical transistors (WECTs). An amplifier was fabricated by using one transistor as well in order to demonstrate the feasibility of fully textile electronic circuits. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3562962] All rights reserved.
引用
收藏
页码:H572 / H577
页数:6
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