RETRACTION: Interactions between planar defects in bulk 3C-SiC (Retraction of Vol 389, Pg 108, 2014)

被引：0
|
作者：
Ikebe, Yohei [1 ]
Nagasawa, Hiroyuki [2 ]
Hatta, Naoki [3 ]
Kawahara, Takamitsu [3 ]
Yagi, Kuniaki [3 ]
机构：
[1] HOYA Corp, Blanks Div, 3280 Nakamaru,Nagasaka Cho, Hokuto, Yamanashi 4088550, Japan
[2] Keio Univ, Fac Sci & Technol, Kohoku Ku, 3-14-1 Hiyoshi, Yokohama, Kanagawa 2238522, Japan
[3] SICOXS CORP, Chiyoda Ku, 3-12-8 Sotokanda, Tokyo 1010021, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2018年 / 503卷
关键词：
D O I：
10.1016/j.jcrysgro.2018.09.045
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：64 / 64
页数：1
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