Disruptive Ultra-Low-Power SOI CMOS Circuits towards μW Medical Sensor Implants

被引：0

作者：

Gosset, Geoffroy ^{[1
]}

Bol, David ^{[1
]}

Pollissard-Quatremere, Guillaume ^{[1
]}

Rue, Bertrand ^{[1
]}

Flandre, Denis ^{[1
]}

机构：

[1] Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain, Belgium

来源：

2010 IEEE INTERNATIONAL SOI CONFERENCE | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we propose disruptive circuit design techniques for ultra-low-power (ULP) medical sensor implants. They use unique CMOS blocks to build ULP diodes and transistors that are implemented with ultra-low-Vt devices in 0.15 mu m fully-depleted SOI CMOS, without process modification. Using these techniques, we propose a highly-efficient power-management unit and a 1.1 mu W interface for capacitive sensors.

引用

页数：2

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