Disruptive Ultra-Low-Power SOI CMOS Circuits towards μW Medical Sensor Implants

被引:0
|
作者
Gosset, Geoffroy [1 ]
Bol, David [1 ]
Pollissard-Quatremere, Guillaume [1 ]
Rue, Bertrand [1 ]
Flandre, Denis [1 ]
机构
[1] Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain, Belgium
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we propose disruptive circuit design techniques for ultra-low-power (ULP) medical sensor implants. They use unique CMOS blocks to build ULP diodes and transistors that are implemented with ultra-low-Vt devices in 0.15 mu m fully-depleted SOI CMOS, without process modification. Using these techniques, we propose a highly-efficient power-management unit and a 1.1 mu W interface for capacitive sensors.
引用
收藏
页数:2
相关论文
共 50 条
  • [1] Ultra-low-power sensor networks in nanometer CMOs
    Gielen, Georges
    ISSCS 2007: International Symposium on Signals, Circuits and Systems, Vols 1 and 2, 2007, : 1 - 2
  • [2] Performance of Ultra-Low-Power SOI CMOS Diodes Operating at Low Temperatures
    de Souza, M.
    Rue, B.
    Flandre, D.
    Pavanello, M. A.
    ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15, 2011, 35 (05): : 325 - 330
  • [3] An ultra-low-power CMOS temperature sensor for RFID applications
    Xu Conghui
    Gao Peijun
    Che Wenyi
    Tan Xi
    Yan Na
    Min Hao
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (04)
  • [4] An ultra-low-power CMOS temperature sensor for RFID applications
    徐琮辉
    高佩君
    车文毅
    谈熙
    闫娜
    闵昊
    半导体学报, 2009, 30 (04) : 83 - 86
  • [5] Ultra-low-power CMOS technologies
    Schrom, G
    Selberherr, S
    CAS '96 PROCEEDINGS - 1996 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 19TH EDITION, VOLS 1 AND 2, 1996, : 237 - 246
  • [6] Ultra-Low-Power CMOS Temperature Sensor for UHF RFID Systems
    Peng, Kun
    Xu, Yong
    Sun, Mingqian
    2019 IEEE 13TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2019,
  • [7] Comparison of Ultra-Low-Power and static CMOS full adders in 0.15 μm FD SOI CMOS
    Kamel, D.
    Bol, D.
    Standaert, F. -X.
    Flandre, D.
    2009 IEEE INTERNATIONAL SOI CONFERENCE, 2009, : 107 - 108
  • [8] A gate-level leakage power reduction method for ultra-low-power CMOS circuits
    Halter, JP
    Najm, FN
    PROCEEDINGS OF THE IEEE 1997 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 1997, : 475 - 478
  • [9] Ultra-Low-Power Circuits for Intermittent Communication
    Torrisi, Alessandro
    Yildirim, Kasim Sinan
    Brunelli, Davide
    JOURNAL OF LOW POWER ELECTRONICS AND APPLICATIONS, 2022, 12 (04)
  • [10] Spintronics for ultra-low-power circuits and systems
    Nature Reviews Electrical Engineering, 2024, 1 (11): : 691 - 691