Thin film oxide-ion conducting electrolyte for near room temperature applications

被引：9

作者：

Garbayo, Inigo ^{[1
]}

Chiabrera, Francesco ^{[1
]}

Alayo, Nerea ^{[1
]}

Santiso, Jose ^{[2
]}

Morata, Alex ^{[1
]}

Tarancon, Albert ^{[1
,3
]}

机构：

[1] Catalonia Inst Energy Res IREC, Dept Adv Mat Energy Applicat, Jardins Dones Negre 1, Barcelona 08930, Spain

[2] CSIC, Barcelona Inst Sci & Technol, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain

[3] ICREA, Passeig Lluis Companys 23, Barcelona 08010, Spain

来源：

JOURNAL OF MATERIALS CHEMISTRY A | 2019年 / 7卷 / 45期

基金：

欧洲研究理事会;

关键词：

PULSED-LASER DEPOSITION; FUEL-CELLS; ELECTRICAL-CONDUCTIVITY; STABILITY; BI4V2O11; YSZ; MEMBRANES; NI; ME; CU;

D O I：

10.1039/c9ta07632h

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Stabilized bismuth vanadate thin films are presented here as superior oxide ionic conductors, for application in solid state electrochemical devices operating near room temperature. Widely studied in the 90s in bulk form due to their unbeatable ionic conduction, this family of materials was finally discarded due to poor stability above 500 degrees C. Here, we however unveil the possibility of using Bi(4)V(1.)8Cu(0.2)O(10.7) at reduced temperatures in thin film-based devices, where the material keeps its unmatched conduction properties and at the same time shows good stability over a wide oxygen partial pressure range.

引用

页码：25772 / 25778

页数：7

共 50 条

[21] Indium oxide thin film transistors fabricated by low-energetic ion bombardment technique at room temperature
Chu, A. K.
Hong, T. I.
Tien, W. C.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (01): : 211 - 215
[22] Room Temperature Bolometric Applications Using Manganese Oxide Thin Films
J. H. Hao
X. Mao
C. H. Chen
D. X. Lu
International Journal of Infrared and Millimeter Waves, 1999, 20 : 2113 - 2120
[23] Room temperature bolometric applications using manganese oxide thin films
Hao, JH
Mao, X
Chen, CH
Lu, DX
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1999, 20 (12): : 2113 - 2120
[24] Graphene as transparent conducting layer for high temperature thin film device applications
Veronese, G. P.
Allegrezza, M.
Canino, M.
Centurioni, E.
Ortolani, L.
Rizzoli, R.
Morandi, V.
Summonte, C.
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2015, 138 : 35 - 40
[25] Mixed Oxide-Ion and Carbonate-Ion Conductors (MOCCs) as Electrolyte Materials for Solid Oxide Fuel Cells
Li, Xue
Xiao, Guoliang
Lee, Seung Min
Huang, Kevin
SOLID STATE IONIC DEVICES 8 - NEMCA, 2011, 33 (40): : 87 - 103
[26] Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
Lee, Juwon
Nagarajan, Ganapathi Subramaniam
Shon, Yoon
Kwon, Younghae
Kang, Tae Won
Kim, Deuk Yong
Kim, Hyungsang
Im, Hyunsik
Park, Chang-Soo
Kim, Eun Kyu
AIP ADVANCES, 2017, 7 (08)
[27] A high-strength Sm-doped CeO2 oxide-ion conducting electrolyte membrane for solid oxide fuel cell application
Dong, Yingchao
Li, Dongfeng
Feng, Xuyong
Dong, Xinfa
Hampshire, Stuart
RSC ADVANCES, 2013, 3 (38): : 17395 - 17401
[28] Probing oxide-ion conduction in low-temperature SOFCs
Sun, Mingzi
He, Qian
Kuang, Xiaojun
Zhang, Qinyuan
Ye, Shi
Huang, Bolong
NANO ENERGY, 2018, 50 : 88 - 96
[29] Nanostructured vanadium oxide thin film with high TCR at room temperature for microbolometer
Wang, Bin
Lai, Jianjun
Li, Hui
Hu, Haoming
Chen, Sihai
INFRARED PHYSICS & TECHNOLOGY, 2013, 57 : 8 - 13
[30] A room temperature HSGFET ammonia sensor based on iridium oxide thin film
Karthigeyan, A
Gupta, RP
Scharnagl, K
Burgmair, M
Sharma, SK
Eisele, I
SENSORS AND ACTUATORS B-CHEMICAL, 2002, 85 (1-2) : 145 - 153

← 1 2 3 4 5 →