Non-linear electrical response of chalcogenide glasses: Memory state phenomena

被引：0

作者：

Asokan, S ^{[1
]}

Gopal, ESR ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India

来源：

NON-LINEAR ELECTROMAGNETIC SYSTEMS: ADVANCED TECHNIQUES AND MATHEMATICAL METHODS | 1998年 / 13卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Investigations on the switching behaviour of arsenic-tellurium glasses with Ge or Al additives, yield interesting information about the dependence of switching on network rigidity, co-ordination of the constituents, glass transition & ambient temperature and glass forming ability.

引用

页码：574 / 577

页数：4

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