Surface oxidation;
Fermi energy pinning;
Dangling bonds and bond saturation;
TOTAL-ENERGY CALCULATIONS;
WAVE BASIS-SET;
RECONSTRUCTIONS;
SPECTROSCOPY;
GAAS(100)-(2X4);
METALS;
OXYGEN;
D O I:
10.1016/j.mee.2009.11.006
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Oxygen atom adsorption on GaAs(0 0 1)-beta 2(2 x 4) during initial surface oxidation is studied by density functional theory (DFT). The results show that one or two oxygen atom adsorption at back-bond sites satisfy the bond saturation conditions leading to no effect on the surface gap states. However, for an oxygen replacement of an As dimer atom at trough site or row site As dimer atoms, an As-As bond is broken. Mid gap states are produced leading to the Fermi level pining due to the unsaturated As dangling bonds. Published by Elsevier B.V.
机构:
Laboratory for Thermostructural Composites,UMR 5801,CNRS-CEA-Snecma-Université Bordeaux l F-33600 Pessac,FranceLaboratory for Thermostructural Composites,UMR 5801,CNRS-CEA-Snecma-Université Bordeaux l F-33600 Pessac,France
VIGNOLES L Gérard
GUETTE Alain
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机构:
Laboratory for Thermostructural Composites,UMR 5801,CNRS-CEA-Snecma-Université Bordeaux l F-33600 Pessac,FranceLaboratory for Thermostructural Composites,UMR 5801,CNRS-CEA-Snecma-Université Bordeaux l F-33600 Pessac,France