The electron Lande g-factor in GaAs-(Ga,Al)As cylindrical quantum dots

被引：0

作者：

Mejia-Salazar, J. R. ^{[1
]}

Porras-Montenegro, N. ^{[1
]}

Dario Perea, J. ^{[1
]}

机构：

[1] Univ Valle, Dept Fis, Cali 25360, Colombia

来源：

PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷

关键词：

Coupled quantum wells; GaAs-(Ga; Al)As; Lande g-factor; ANISOTROPY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we study the Lande g-factor of a GaAs-(Ga,Al)As cylindrical quantum dot under an axis-parallel applied magnetic field, using the Ogg-McCombe effective Hamiltonian[1] for the electron in the conduction band of the GaAs-(Ga,Al)As heterostructure, which includes nonparabolicity and anisotropy effects. The quantum dot is assumed to consist of a finite length cylinder of GaAs surrounded by (Ga,Al)As. Our calculations are performed for different radii and lengths of the cylindrical GaAs-(Ga,Al)As quantum pillbox and as function of the applied magnetic field. Our results are in good agreement with previous theoretical results[2] in the limiting geometry of a quantum well.

引用

页码：463 / 464

页数：2

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