The electron Lande g-factor in GaAs-(Ga,Al)As cylindrical quantum dots

被引：0
|
作者：
Mejia-Salazar, J. R. [1 ]
Porras-Montenegro, N. [1 ]
Dario Perea, J. [1 ]
机构：
[1] Univ Valle, Dept Fis, Cali 25360, Colombia
来源：
PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷
关键词：
Coupled quantum wells; GaAs-(Ga; Al)As; Lande g-factor; ANISOTROPY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we study the Lande g-factor of a GaAs-(Ga,Al)As cylindrical quantum dot under an axis-parallel applied magnetic field, using the Ogg-McCombe effective Hamiltonian[1] for the electron in the conduction band of the GaAs-(Ga,Al)As heterostructure, which includes nonparabolicity and anisotropy effects. The quantum dot is assumed to consist of a finite length cylinder of GaAs surrounded by (Ga,Al)As. Our calculations are performed for different radii and lengths of the cylindrical GaAs-(Ga,Al)As quantum pillbox and as function of the applied magnetic field. Our results are in good agreement with previous theoretical results[2] in the limiting geometry of a quantum well.
引用
收藏
页码：463 / 464
页数：2
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