Study on ITO/Ag/ITO multilayer film as the electrode of organic light-emitting diodes - art. no. 67222Q

被引:0
|
作者
Zhang, Lei [1 ]
Yu Jun-sheng [1 ]
Zhong, Jian [1 ]
Wang, Hong [1 ]
Jiang Ya-dong [1 ]
Deng Jian-fang [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Sch Optoelect Informat, Chengdu 610054, Peoples R China
关键词
ITO; DC magnetron sputtering; ITO/Ag/ITO multilayer film; organic light-emitting diode;
D O I
10.1117/12.783346
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ITO (Indium tin oxide) film has been widely used as transparent electrode for organic light-emitting diodes (OLEDs). Higher conductibility and transparency, smoother surface morphology and higher work function are indispensable for the fabrication of high performance OLEDs, especially for transparent and double-side devices. Therefore, it is necessary to deposit ITO films at low temperature to protect the organic films of OLED from damaging during fabrication process. In this work a novel transparent electrode ITO/Ag/ITO was introduced to the OLED device. This kind of transparent electrode was used to reduce the sheet resistance of electrode and raise the performance of OLED device. By theoretical simulation, the optimum film thickness of three organic layers was obtained. ITO and Ag films were prepared by DC magnetron sputtering at room temperature. The transparent electrode with low sheet resistance of 6.3 Omega/sq and high transmittance of 87% at 550 nm was achieved. OLED consisted of this multilayer film was developed. The relationship between the thickness of Ag film and photoelectric performance of multilayer films was also discussed.
引用
收藏
页码:Q7222 / Q7222
页数:5
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