A 1.8-V 0.7 ppm/°C high order temperature-compensated CMOS current reference

被引：7
|
作者：
Lu, Yang [1 ]
Zhang, Bo [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2007年 / 51卷 / 03期
关键词：
CMOS; bandgap current reference; curvature-compensated; temperature-compensation; temperature coefficient;
D O I：
10.1007/s10470-007-9053-9
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A high order curvature compensation technique for current reference generator which exploits the I-V characteristic of MOS to achieve I-SC (T (m)) (m >= 2) is described. I-SC (T-m ) is a self-compensated current which corrects its negative three-order TC (Temperature Coefficient) and linear TC by itself. Then, I (T-2) is achieved also by exploiting the I-V characteristic of MOS, for correcting the other negative high order parts of I-SC (T-m). This circuit operates on a 1.8 V power supply and is compatible with a standard n-well 0.5-mu m digital CMOS process. The circuit realizes a temperature coefficient of 0.7 ppm/degrees C, a deviation of the simulated output current of 0.011% from -20 degrees C to + 150 degrees C and 97.5 dB PSRR through HSPICE simulation.
引用
收藏
页码：175 / 179
页数：5
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