A Millimeter-Wave Substrate Integrated Waveguide Filter in Si-BCB Technology

被引：0

作者：

Corsi, Jordan ^{[1
]}

Acri, Giuseppe ^{[1
]}

Moulin, Maxime ^{[1
]}

Zerounian, Nicolas ^{[2
]}

Grimault-Jacquin, Anne-Sophie ^{[2
]}

Vincent, Loic ^{[3
]}

Ducournau, Guillaume ^{[4
]}

Aniel, Frederic ^{[2
]}

Podevin, Florence ^{[1
]}

Ferrari, Philippe ^{[1
]}

Pistono, Emmanuel ^{[1
]}

机构：

[1] Univ Grenoble Alpes, RFIC Lab, Grenoble INP, Grenoble, France

[2] Univ Paris Saclay, CNRS, Ctr Nanosci & Nanotechnol, Paris, France

[3] Grenoble INP, Ctr Interuniv MicroElect CIME, Grenoble, France

[4] IEMN UMR 8520, Lille, France

来源：

2021 51ST EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2021年

关键词：

Silicon-BenzoCycloButene; millimeter-wave; SIW filter; retro-simulations; DESIGN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the design, measurements and retro-simulations of a 110-GHz 5th-order Chebyshev filter, based on substrate integrated waveguide in a 30-mu m thick BenzoCycloButene (BCB) above-IC technology, are presented. A center frequency of 101.5 GHz, corresponding to a 8.5-GHz frequency shift towards low frequencies, and 11.8% of fractional bandwidth are measured. The filter presents 4.6-dB of insertion loss and a low return loss of 17.5 dB in the passband. Thanks to optical profilometer measurements, a deformation of the top metallic cover of the SIW structures was observed. Electromagnetic simulations taking this top surface deformation into account allows recovering the measured filter behaviour with the center frequency shift. Thus, this BCB above-IC technology seems promising for the design of passive circuits at higher frequencies, at which substrate heights of 30 mu m are more appropriate.

引用

页码：849 / 852

页数：4

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