Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model

被引：15
|
作者：
Taher, H [1 ]
Schreurs, D [1 ]
Nauwelaers, B [1 ]
机构：
[1] Katholieke Univ Leuven, ESAT, TELEMIC, B-3001 Heverlee, Belgium
来源：
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2005年 / 15卷 / 02期
关键词：
hetro-junction bipolar transistor; microwave transistor; neural network; nonlinear modeling; large signal;
D O I：
10.1002/mmce.20069
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
In this article, we demonstrate how the constitutive relations for the nonlinear modeling of hetro-junction bipolar transistors (HBTs) can be based on an artificial neural network (ANN) model representation.. The model is implemented using a commercial microwave simulator, and has been validated by DC and nonlinear measurements. Excellent agreement is obtained as compared with the results of the DC measurements, and the model predicts well the higher-order harmonics in a single tone test. (c) 2005 Wiley Periodicals, Inc.
引用
收藏
页码：203 / 209
页数：7
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