Electronic properties of Si δ-doped GaAs under an applied electric field

被引:22
|
作者
Ozturk, E [1 ]
Ergun, Y
Sari, H
Sokmen, I
机构
[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey
[2] Dokuzeylul Univ, Dept Phys, Izmir, Turkey
关键词
D O I
10.1088/0268-1242/16/6/301
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have theoretically investigated the electronic structure of Si delta -doped GaAs inserted into a quantum well under an applied electric field. For uniform distribution we have studied the influence of the electric field on the donor concentration. The electronic properties such as the effective potential. the density profile, the subband energies, the subband occupations and the Fermi energy level have been calculated by solving the Schrodinger and Poisson equations self-consistently. From our calculations, we have seen that the change of the electronic properties as dependent on the applied electric field is more pronounced at low doping concentration. The high electric fields can induce a spatial separation between confined electrons and ionized dopants in the delta -doped GaAs structure, resulting in enhanced free-carrier mobility in devices.
引用
收藏
页码:421 / 426
页数:6
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