Effect of Lithium Codoping on Dual Acceptor Doped ZnO

被引:0
|
作者
Kannan, R. [1 ]
Rajagopan, S. [2 ]
Murugaraj, R. [3 ]
Haridass, B. [1 ]
Sivagamasundari, A. [1 ]
Vanitha, D. [1 ]
Selvarani, V. [1 ]
Oudayakumar, K. [1 ]
Arumugam, S. [4 ]
Radheep, R. Mohan [4 ]
机构
[1] Pondicherry Engn Coll, Dept Phys, Pondicherry 605014, India
[2] Pondicherry Engn Coll, Dept Chem, Pondicherry 605014, India
[3] Anna Univ, Dept Phys, Madras 600044, Tamil Nadu, India
[4] Bharathidasan Univ, Ctr High Pressure Studies, Tiruchirappalli 623104, Tamil Nadu, India
关键词
Zinc Oxide; Room Temperature ferromagnetism; dual doped; Photoluminescence;
D O I
10.1063/1.3606262
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The origin of ferromagnetism in zinc oxide is not yet clear due to many reasons like nature of native defects, role of dopant ions, impurities etc. Numerous contrary reports are available regarding the appearance of RTFM in codoped zinc oxide. Reproducibility, complicated wet chemical synthesis, Appearance of quasi excitonic particles is responsible for non accountability of ferromagnetism in codoped zinc oxide.
引用
收藏
页码:1133 / +
页数:2
相关论文
共 50 条
  • [21] Enhancement of room temperature ferromagnetism in C-doped ZnO films by nitrogen codoping
    Yi, J. B.
    Shen, L.
    Pan, H.
    Van, L. H.
    Thongmee, S.
    Hu, J. F.
    Ma, Y. W.
    Ding, J.
    Feng, Y. P.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [22] Acceptor formation mechanisms determination from electrical and optical properties of p-type ZnO doped with lithium and nitrogen
    Wang, X. H.
    Yao, B.
    Wei, Z. P.
    Sheng, D. Z.
    Zhang, Z. Z.
    Li, B. H.
    Lu, Y. M.
    Zhao, D. X.
    Zhang, J. Y.
    Fan, X. W.
    Guan, L. X.
    Cong, C. X.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (21) : 4568 - 4571
  • [23] Improved moisture stability of thin Ga-doped ZnO films by indium codoping
    Song, Huaping
    Makino, Hisao
    Nomoto, Junichi
    Yamamoto, Naoki
    Yamamoto, Tetsuya
    APPLIED SURFACE SCIENCE, 2018, 457 : 241 - 246
  • [24] Influence of codoping with ga on the electrical and optical properties of N-doped ZnO films
    Matsui, H
    Saeki, H
    Tabata, H
    Kawai, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (09) : G508 - G512
  • [25] DONOR-ACCEPTOR PAIR LUMINESCENCE IN ACCEPTOR DOPED SILICON AFTER LITHIUM DIFFUSION
    THEWALT, MLW
    ZIEMELIS, UO
    PARSONS, RR
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 456 - 456
  • [26] No acceptor enhanced RTFM in Nitrogen doped ZnO synthesized by Ammonialysis
    Sivagami, N.
    Vanidha, D.
    Arunkumar, A.
    Maheswarikuppaiyandi, A. Sivagamasundari
    Reddy, Nareddula Dastagiri
    Rajagopan, S.
    Kannan, R.
    SOLID STATE PHYSICS, VOL 57, 2013, 1512 : 178 - 179
  • [27] Memristors based on lithium doped ZnO films
    E. Y. Elbakyan
    R. K. Hovsepyan
    A. R. Poghosyan
    Journal of Contemporary Physics (Armenian Academy of Sciences), 2015, 50 : 277 - 281
  • [28] Memristors based on lithium doped ZnO films
    Elbakyan, E. Y.
    Hovsepyan, R. K.
    Poghosyan, A. R.
    JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES, 2015, 50 (03) : 277 - 281
  • [29] Deposition of the low resistive Ag-N dual acceptor doped p-type ZnO thin films
    Swapna, R.
    Kumar, M. C. Santhosh
    CERAMICS INTERNATIONAL, 2013, 39 (02) : 1799 - 1806
  • [30] Identification of Acceptor States in Li-N Dual-Doped p-Type ZnO Thin Films
    Zhang Yin-Zhu
    Lu Jian-Guo
    Ye Zhi-Zhen
    He Hai-Ping
    Chen Lan-Lan
    Zhao Bing-Hui
    CHINESE PHYSICS LETTERS, 2009, 26 (04)