State-of-the-Art Inkjet-Printed Metal-Insulator-Metal (MIM) Capacitors on Silicon Substrate

被引：21

作者：

Mariotti, Chiara ^{[1
]}

Cook, Benjamin S. ^{[2
]}

Roselli, Luca ^{[1
]}

Tentzeris, Manos M. ^{[2
]}

机构：

[1] Univ Perugia, Dept Engn, I-06123 Perugia, Italy

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2015年 / 25卷 / 01期

关键词：

Inkjet-printing; printed electronics; RF passives; silicon; thin-film capacitors;

D O I：

10.1109/LMWC.2014.2365745

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertically-integrated metal-insulator-metal (MIM) capacitors on silicon are demonstrated for the first time utilizing an entirely additive RF-specific inkjet-printing process. The inkjet-printed MIM capacitors demonstrate a high capacitance per unit area of up to 33 by utilizing novel dielectric inks, while achieving quality factors (Q) up to 25 and self-resonant frequencies (SRFs) above 1 GHz. Measurements of dielectric permittivity, leakage current, voltage breakdown, and fabrication repeatability are presented confirming the high-performance operation of the printed MIM capacitors.

引用

页码：13 / 15

页数：3

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