Potential of CdZnTe Thin Film Back Buffer Layer for CdTe Solar Cells

被引：0

作者：

Alfadhili, Fadhil K. ^{[1
]}

Phillips, Adam B. ^{[1
]}

Jamarkattel, Manoj K. ^{[1
]}

Snyder, Austin J. ^{[1
]}

Gibbs, Jacob M. ^{[1
]}

Liyanage, Geethika K. ^{[1
]}

Heben, Michael J. ^{[1
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Wright Ctr Photovolta Innovat & Commercializat, Toledo, OH 43606 USA

来源：

2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2019年

关键词：

CdTe; Back Buffer Layer; Back Barrier height; CONTACT; EFFICIENCY; ZNTE;

D O I：

10.1109/pvsc40753.2019.8981338

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cadmium zinc telluride (CdZnTe, CZT) thin films were investigated for use as a back buffer layer in CdTe devices. We show that the CZT film is easily doped with copper (Cu). Devices with CZT:Cu/Au and CZT:Cu/Te/Au back contacts demonstrated significant gains in V-OC compared to Cu/Au back contacts. Barrier height measurements indicate that the valence band edge of the CZT is close to that of CdTe, which, when coupled with the high dopant density, should result in upward band bending at the back of the device. In the case of the CZT:Cu/Au back contact, the large band offset between the CZT and Au results in a depletion region that extends into the CdTe, limiting device performance. When the alignment is improved with the incorporation of Te, the efficiency improved.

引用

页码：140 / 143

页数：4

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