Low Frequency Noise in Strained Si Heterojunction Bipolar Transistors

被引：1

作者：

Fjer, M. ^{[1
]}

Persson, S. ^{[1
]}

Escobedo-Cousin, E. ^{[1
]}

O'Neill, A. G. ^{[1
]}

机构：

[1] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 12期

基金：

英国工程与自然科学研究理事会;

关键词：

Defect; low frequency noise; strain-relaxed buffer (SRB); strained Si heterojunction bipolar transistors (HBTs); strained silicon; 1/f noise; UHV/CVD EPITAXIAL SI; DEPENDENCE; RF; TECHNOLOGY; CIRCUIT; NPN; DC;

D O I：

10.1109/TED.2011.2167753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low frequency noise performance of strained Si heterojunction bipolar transistors (sSi HBTs) is presented for the first time. Conventional SiGe HBTs and Si bipolar junction transistors (BJTs), processed with strained Si devices, were also measured as a reference. It is found that a lower noise level is obtained in sSi HBTs for a given collector current, which is important for circuit applications, compared with either SiGe HBTs or Si BJTs. However, sSi HBTs exhibit greater low frequency noise compared with other devices at fixed base current. This is due to the presence of defects that are caused by the integration of the strain-relaxed buffer in the fabrication of sSi HBTs. The relationship between low frequency noise and defects is supported by material characterization.

引用

页码：4196 / 4203

页数：8

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