Depth profiling analysis of barrier-type anodic aluminium oxide films formed on substrates of controlled roughness

被引：4

作者：

Trigoulet, N. ^{[1
]}

Tuccitto, N. ^{[2
]}

Delfanti, I. ^{[2
]}

Licciardello, A. ^{[2
]}

Molchan, I. S. ^{[1
]}

Skeldon, P. ^{[1
]}

Thompson, G. E. ^{[1
]}

Tempez, A. ^{[3
]}

Chapon, P. ^{[3
]}

机构：

[1] Univ Manchester, Ctr Corros & Protect, Sch Mat, Manchester M60 1QD, Lancs, England

[2] Univ Catania, Dipartimento Sci Chim, I-95124 Catania, Italy

[3] HORIBA Jobin Yvon, F-91165 Longjumeau, France

来源：

SURFACE AND INTERFACE ANALYSIS | 2011年 / 43卷 / 1-2期

基金：

英国工程与自然科学研究理事会;

关键词：

TOF-SIMS; GD-OES; depth resolution; anodic oxide; roughness; RESOLUTION;

D O I：

10.1002/sia.3410

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The depth resolutions achieved by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and glow discharge optical emission spectroscopy (GD-OES) are comparable for the analysis of relatively flat specimens. However, the precision of sputtering-induced depth profiling techniques has been shown to be dramatically influenced by the initial roughness of specimen surface. The effect of the specimen roughness on the depth resolution achieved by both techniques has been examined here using textured aluminium substrates supporting anodic oxide films. As a result of dissimilarities in the sputtering processes, TOF-SIMS and GD-OES show significantly different elemental depth profiles for electrolyte-derived species incorporated into anodic oxide films formed on superpure aluminium substrates of controlled texture. Copyright (C) 2010 John Wiley & Sons, Ltd.

引用

页码：183 / 186

页数：4

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