Modelling transport in single electron transistor

被引：2
|
作者：
Dinh Sy Hien [1 ]
Huynh Lam Thu Thao [1 ]
Le Hoang Minh [1 ]
机构：
[1] HCM Univ Nat Sci, Ho Chi Minh City, Vietnam
来源：
APCTP-ASEAN WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY (AMSN08) | 2009年 / 187卷
关键词：
Coulomb blockable oscillation; single electron transistor; graphic user interface; I-V characteristics; SET MODEL;
D O I：
10.1088/1742-6596/187/1/012060
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We introduce a model of single electron transistor (SET). Simulation programme of SET is used as the exploratory tool in order to gain better understanding of process and device physics. This simulator includes a graphic user interface (GUI) in Matlab. The SET was simulated using GUI in Matlab to get current-voltage (I-V) characteristics. In addition, effects of device capacitance, bias, temperature on the I-V characteristics were obtained. In this work, we review the capabilities of the simulator of the SET. Typical simulations of the obtained I-V characteristics of the SET are presented.
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页数：5
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