Be-doped low-temperature grown GaAs for ultrafast optoelectronic devices and applications

被引：4

作者：

Coutaz, JL ^{[1
]}

Roux, JF ^{[1
]}

Gaarder, A ^{[1
]}

Marcinkevicius, S ^{[1
]}

Jasinski, J ^{[1
]}

Korona, K ^{[1
]}

Kaminska, M ^{[1
]}

Bertulis, K ^{[1
]}

Krotkus, A ^{[1
]}

机构：

[1] Univ Savoie, LAHC, F-73376 Le Bourget du Lac, France

来源：

SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/SIM.2000.939204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we review ultrafast optoelectronics devices made from low-temperature grown GaAs and related materials. The required material parameters for optimized devices are discussed. Our investigations on technology, structural quality, electrical characteristics and photoexcited carrier dynamics show that beryllium doped LT-GaAs meets all these requirements. In addition, doping with Be provides more flexibility in tuning material characteristics of low-temperature grown GaAs, which is a considerable advantage in device fabrication.

引用

页码：89 / 96

页数：8

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