Polarization-Induced Charge Distribution at Homogeneous Zincblende/Wurtzite Heterostructural Junctions in ZnSe Nanobelts

被引：30
|
作者：
Li, Luying [1 ]
Jin, Lei [2 ,3 ]
Wang, Jianbo [2 ,3 ]
Smith, David J. [1 ]
Yin, Wan-Jian [4 ]
Yan, Yanfa [4 ]
Sang, Hongqian [2 ,3 ]
Choy, Wallace C. H. [5 ]
McCartney, Martha R. [1 ]
机构：
[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
[2] Wuhan Univ, Ctr Electron Microscopy, Sch Phys & Technol, Wuhan 430072, Peoples R China
[3] Wuhan Univ, MOE Key Lab Artificial Micro & Nano Struct, Wuhan 430072, Peoples R China
[4] Natl Renewable Energy Lab, Golden, CO 80401 USA
[5] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 10期
关键词：
electron holography; ZnSe; semiconductors; nanocrystals; structure-property relationships; TOTAL-ENERGY CALCULATIONS; AXIS ELECTRON HOLOGRAPHY; TWIN-PLANE SUPERLATTICES; WAVE BASIS-SET; NANOWIRE HETEROSTRUCTURES; GAAS;
D O I：
10.1002/adma.201103920
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Homogeneous heterostructural wurtzite (WZ)/ zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw- tooth- like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization- induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures.
引用
收藏
页码：1328 / 1332
页数：5
相关论文
共 39 条
  • [21] Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
    J Appl Phys, 8 (4520):
  • [22] Hydrostatic pressure dependence of polarization-induced interface charge in AlGaN/GaN heterostructures determined by means of capacitance-voltage characterization
    Franssen, G.
    Plesiewicz, J. A.
    Dmowski, L. H.
    Prystawko, P.
    Suski, T.
    Krupczynski, W.
    Jachymek, R.
    Perlin, P.
    Leszczynski, M.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)
  • [23] Hydrostatic pressure dependence of polarization-induced interface charge in AlGaN/GaN heterostructures determined by means of capacitance-voltage characterization
    Franssen, G.
    Plesiewicz, J.A.
    Dmowski, L.H.
    Prystawko, P.
    Suski, T.
    Krupczyński, W.
    Jachymek, R.
    Perlin, P.
    Leszczyński, M.
    Journal of Applied Physics, 2006, 100 (11):
  • [24] Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
    Smorchkova, IP
    Elsass, CR
    Ibbetson, JP
    Vetury, R
    Heying, B
    Fini, P
    Haus, E
    DenBaars, SP
    Speck, JS
    Mishra, UK
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) : 4520 - 4526
  • [25] Polarization-Induced Band-Alignment Transition and Nonvolatile p-n Junctions in 2D Van der Waals Heterostructures
    Yang, Mingjun
    Shu, Haibo
    Li, Yanyan
    Cao, Dan
    Chen, Xiaoshuang
    ADVANCED ELECTRONIC MATERIALS, 2022, 8 (03):
  • [26] Polarization-induced charge separation in conjugated microporous polymers for efficient visible light-driven C-3 selenocyanation of indoles
    Xie, Qiujian
    Yang, Yumin
    Zhang, Weijie
    Gao, Zhu
    Li, Xiaofeng
    Tang, Juntao
    Pan, Chunyue
    Yu, Guipeng
    CHEMICAL SCIENCE, 2021, 12 (15) : 5631 - 5637
  • [27] Polarization-Induced Quantum-Mechanical Charge Transfer in Perovskite-Graphene Nanocomposites with Superior Electro-optic Switching Modulation
    Aepuru, Radhamanohar
    Rao, Ch N.
    Udayabhaskar, R.
    Vennu, Divya
    Gaikwad, Vishwajit M.
    Kumar, Viresh
    Panda, H. S.
    Aqueveque, Pablo
    Cao, Peijiang
    Mangalaraja, Ramalinga Viswanathan
    JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 124 (49): : 26648 - 26658
  • [28] Intrinsic Polarization-Induced Enhanced Ferromagnetism and Self-Doped p-n Junctions in CrBr3/GaN van der Waals Heterostructures
    Yang, Mingjun
    Shu, Haibo
    Tang, Pengtao
    Liang, Pei
    Cao, Dan
    Chen, Xiaoshuang
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (07) : 8764 - 8773
  • [29] Influence of polarization-induced electric field on subband structure and electron distribution in AlxGa1-xN/GaN double quantum wells
    Lei, SY
    Shen, B
    Cao, L
    Chen, DJ
    Zhang, R
    Zheng, YD
    SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials, 2004, : 69 - 72
  • [30] Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors
    Ji, Dong
    Liu, Bing
    Lu, Yanwu
    Liu, Guipeng
    Zhu, Qinsheng
    Wang, Zhanguo
    APPLIED PHYSICS LETTERS, 2012, 100 (13)
1234