Polarization-Induced Charge Distribution at Homogeneous Zincblende/Wurtzite Heterostructural Junctions in ZnSe Nanobelts

被引：30

作者：

Li, Luying ^{[1
]}

Jin, Lei ^{[2
,3
]}

Wang, Jianbo ^{[2
,3
]}

Smith, David J. ^{[1
]}

Yin, Wan-Jian ^{[4
]}

Yan, Yanfa ^{[4
]}

Sang, Hongqian ^{[2
,3
]}

Choy, Wallace C. H. ^{[5
]}

McCartney, Martha R. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[2] Wuhan Univ, Ctr Electron Microscopy, Sch Phys & Technol, Wuhan 430072, Peoples R China

[3] Wuhan Univ, MOE Key Lab Artificial Micro & Nano Struct, Wuhan 430072, Peoples R China

[4] Natl Renewable Energy Lab, Golden, CO 80401 USA

[5] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 10期

关键词：

electron holography; ZnSe; semiconductors; nanocrystals; structure-property relationships; TOTAL-ENERGY CALCULATIONS; AXIS ELECTRON HOLOGRAPHY; TWIN-PLANE SUPERLATTICES; WAVE BASIS-SET; NANOWIRE HETEROSTRUCTURES; GAAS;

D O I：

10.1002/adma.201103920

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Homogeneous heterostructural wurtzite (WZ)/ zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw- tooth- like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization- induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures.

引用

页码：1328 / 1332

页数：5

共 39 条

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