Effect of gate voltage on hot-carrier-induced on-resistance degradation in high-voltage n-type lateral diffused metal-oxide-semiconductor transistors

The phenomenon and mechanism of hot-carrier-induced on-resistance (R-on) degradation for the n-type lateral diffused metal-oxide-semiconductor (MOS) transistors stressed under various gate voltages (V-g) are investigated. R-on degradation of the device is found to be attributed to the interface state (N-it) generation in the N- drift region. Moreover, R-on degradation is almost identical for the devices stressed under medium V-g and high V-g, despite the fact that bulk current of the device is much greater at high V-g bias. Such an anomalous R-on degradation is suggested to be the result of two combined factors: the magnitude of impact ionization rate and N-it generation efficiency.