ZnO film deposition by DC magnetron sputtering: Effect of target configuration on the film properties

被引:6
|
作者
Arakelova, E. [1 ]
Khachatryan, A. [1 ]
Kteyan, A. [1 ]
Avjyan, K. [1 ]
Grigoryan, S. [1 ]
机构
[1] State Engn Univ Armenia, 105 Terian St, Yerevan, Armenia
关键词
Zinc oxide; Magnetron sputtering; Target configuration; XRD; Optical and electrical measurements; THIN-FILMS; OPTICAL-PROPERTIES; OPTIMIZATION;
D O I
10.1016/j.tsf.2016.06.030
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ballistic transport model for target-to-substrate atom transfer during magnetron sputter deposition was used to develop zinc target (cathode) configuration that enabled growth of uniform zinc oxide films on extensive surfaces and provided reproducibility of films characteristics irrespective of the cathode wear-out. The advantage of the developed target configuration for high-quality ZnO film deposition was observed in the sputtering pressure range of 5-50 mTorr, and in the range of cathode-to-substrate distances 7-20 cm. Characteristics of the deposited films were demonstrated by using X-ray diffraction analysis, as well as optical and electrical measurements. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:407 / 413
页数:7
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