A linear 0.18um CMOS Distributed Low Noise Amplifier from 3.1 to 10.6 GHz with Cascode Cells

被引：0

作者：

Shamsadini, Shila ^{[1
]}

Kashani, Farokh Hojat ^{[2
]}

Bathaei, Neda ^{[3
]}

机构：

[1] Azad Univ, South Tehran Branch, Elect Engn, Tehran, Iran

[2] Iran Univ Sci & Technol, Dept Elect Engn, Tehran, Iran

[3] Azad Univ, South Tehran Branch, Tehran, Iran

来源：

ENABLING SCIENCE AND NANOTECHNOLOGY | 2011年 / 1341卷

关键词：

Noise; Amplifiers; Telecommunication;

D O I：

10.1063/1.3586976

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, we propose a design methodology of 3.1-10.6GHz Ultra-wideband (UWB) Distributed Low Noise Amplifier using standard 0.18 urn CMOS technology which is applicable in telecommunication. The four cells DLNA, each cell contains cascode architecture, can be use in broadband applications. The proposed distributed low noise amplifier has a good input and output matching over the full band of 3.1-10.6 GHz. We achieve acceptable results for low noise amplifier as a flat power gain of 12.5dB (S21) from 3.1 to 10.6GHz, which is ripple 0.3dB over the full UWB band. An input impedance matching is <-15 dB (S11) and an output impedance matching of <-15 dB (S22) over the entire band. Our measurements show this LNA achieves the minimum noise figure of 2.8dB.

引用

页码：161 / +

页数：2

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