Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range

被引：2

作者：

Chen, Zhengwei ^{[1
]}

Saito, Katsuhiko ^{[1
]}

Tanaka, Tooru ^{[1
]}

Nishio, Mitsuhiro ^{[1
]}

Guo, Qixin ^{[1
]}

机构：

[1] Saga Univ, Dept Elect & Elect Engn, Synchrotron Light Applicat Ctr, Saga 8408502, Japan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2016年 / 27卷 / 09期

关键词：

THIN-FILMS; EPITAXY; TEMPERATURE; DEPOSITION; SAPPHIRE; OXIDE;

D O I：

10.1007/s10854-016-4968-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly transparent Ga doped ZnO thin films were prepared on (0001) sapphire substrates by pulsed laser deposition. Hall-effect measurement reveals that electron concentration of the ZnO films can be controlled between 10(18) and 10(21) cm(-3) by adjusting Ga contents in the targets. Optical measurements show the transmittance is above 60 % in the near-infrared wavelength region for all Ga doped ZnO films. Meanwhile, these films also have high crystal quality and smooth surface when the electron concentration up to 10(21) cm(-3), suggesting that the Ga doped ZnO is a promising material for using as transparent electrode for near infrared optoelectronic devices.

引用

页码：9291 / 9296

页数：6

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