Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN

被引：80

作者：

Carrano, JC ^{[1
]}

Li, T ^{[1
]}

Brown, DL ^{[1
]}

Grudowski, PA ^{[1
]}

Eiting, CJ ^{[1
]}

Dupuis, RD ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 17期

关键词：

D O I：

10.1063/1.122448

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the temporal and the frequency response of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN. The best devices show a fast 10%-90% rise time of similar to 23 ps implying a bandwidth of >15 GHz. These time domain data have been corroborated by direct measurement of the power spectral content. From this a cutoff frequency, f (3dB), of similar to 16 GHz dB has been obtained. Analysis in terms of reverse bias and geometric scaling indicates that the photodetectors are transit-time limited. Modeling of the temporal behavior indicates that a slow component in the time and frequency response data is a consequence of the hole drift velocity. (C) 1998 American Institute of Physics. [S0003-6951(98)03043-5].

引用

页码：2405 / 2407

页数：3

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