Semiconductor materials characterisation by Raman spectroscopy

Among optical techniques used in the characterization of semiconductors, Raman Spectroscopy (RS) has emerged as a powerful tool. Its advantages are its versatility and well-developed theory which permits the study of phonons, quantitative determination of carrier concentration, stress and electric field besides identification of impurities and unknown phases. It is complementary to the well-known technique of Photoluminescence (PL) and requires similar equipment. RS has also proved to be the most powerful technique for investigating vibrational excitations in superlattices. This paper reviews the application of Raman spectroscopy to semiconductor materials characterisation and provides examples from studies on surface passivation of CdTe. ion-implantation of Si donors in GaAs and evaluation of InGaAs / InP quantum wells.