Study of Nd-implanted Si-based emitting film materials

被引：0

作者：

Yuan, ML ^{[1
]}

Wang, QN ^{[1
]}

Wang, SF ^{[1
]}

Zhang, XF ^{[1
]}

Jiang, L ^{[1
]}

机构：

[1] NanChang Univ, Jiangxi 330047, Peoples R China

来源：

Light-Emitting Diode Materials and Devices | 2005年 / 5632卷

关键词：

Nd implantation; Si-based emitting films; photoluminescence;

D O I：

10.1117/12.573316

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photoluminescence (PL) spectra at room temperature for monocrystal Si wafer and thermal oxide Si samples doped Nd ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL peaks increases with the increasing of Nd ion dose during ion beam synthesis within a certain limits, moreover, photoluminescence is closely relative to the temperature of thermal annealing. Besides, the feature and appearance of the samples was surveyed with atomic force microscopy (AFM). The photoluminescence mechanism for our samples is also discussed.

引用

页码：248 / 252

页数：5

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