Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

被引：8

作者：

Buchholt, K. ^{[1
]}

Eklund, P. ^{[1
]}

Jensen, J. ^{[1
]}

Lu, J. ^{[1
]}

Ghandi, R. ^{[2
]}

Domeij, M. ^{[2
]}

Zetterling, C. M. ^{[2
]}

Behan, G. ^{[3
,4
]}

Zhang, H. ^{[3
,4
]}

Spetz, A. Lloyd ^{[1
]}

Hultman, L. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden

[2] Royal Inst Technol, KTH, Sch Informat & Commun Technol, SE-16440 Kista, Sweden

[3] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland

[4] Trinity Coll Dublin, CRANN, Dublin 2, Ireland

来源：

JOURNAL OF CRYSTAL GROWTH | 2012年 / 343卷 / 01期

关键词：

Surface structure; Atomic force microscopy; Helium ion microscopy; Physical vapor deposition processes; Titanium compound; M(N+1)AX(N) PHASES; TI3SIC2; TITANIUM; CONTACTS; TI2GEC; GE;

D O I：

10.1016/j.jcrysgro.2012.01.020

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial Ti3GeC2 thin films were deposited on 4 degrees off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {11 (2) over bar0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：133 / 137

页数：5

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