Effect of starting melt composition on growth of La3Ta0.5Ga5.5O14 crystal

被引：14
|
作者：
Takeda, H
Fukuda, T
Kawanaka, H
Onozato, N
机构：
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Victor Co Japan Ltd, Yokosuka, Kanagawa 2398550, Japan
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2001年 / 12卷 / 03期
关键词：
D O I：
10.1023/A:1011243219013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The phase diagram of the La2O3-Ta2O5-Ga2O3 system around La3Ta0.5Ga5.5O14 (LTG) was investigated by a differential thermal analysis and the quenching method. La3Ta0.5Ga5.5O14 single crystals were subsequently grown from different starting melt compositions using the Czochralski technique. The effect of the starting melt composition on crystal quality was examined by measuring the variation in the chemical composition and lattice parameters along the growth axis. On the basis of these experimental results, we have grown LTG single crystals over 2 inches in diameter. (C) 2001 Kluwer Academic Publishers.
引用
收藏
页码：199 / 202
页数：4
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