Vanadium doping in 4H-SiC epitaxial growth for carrier lifetime control

被引：26

作者：

Miyazawa, Tetsuya ^{[1
]}

Tawara, Takeshi ^{[2
,3
]}

Takanashi, Ryosuke ^{[1
]}

Tsuchida, Hidekazu ^{[1
]}

机构：

[1] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058569, Japan

[3] Fuji Elect Co Ltd, Hino, Tokyo 1918502, Japan

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 11期

关键词：

SILICON-CARBIDE; DIODES; RECOMBINATION; TEMPERATURE; DEFECTS;

D O I：

10.7567/APEX.9.111301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate controlled vanadium doping in 4H-SiC epitaxial growth, aimed at reducing the carrier lifetime in the epitaxial layers (epilayers), toward quenching the injection of minority carriers from the drift layer into the substrate in the forward operation of bipolar devices. The doping efficiency of vanadium and the quality of the epilayers were investigated for different gas systems and growth conditions. The photoluminescence spectra and decay curves of band-edge luminescence were evaluated for nitrogen-and vanadium-doped epilayers. The epilayers doped with nitrogen and vanadium demonstrated much shorter minority carrier lifetimes (<20 ns) compared with the epilayer doped with nitrogen only. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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