共 33 条
Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor
被引:75
|作者:
Huang, Xiao-Di
[1
]
Li, Yi
[1
]
Li, Hao-Yang
[1
]
Xue, Kan-Hao
[1
]
Wang, Xingsheng
[1
]
Miao, Xiang-Shui
[1
]
机构:
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Memristor;
resistive switching;
bilayer structure;
forming-free;
thermal stability;
SELF-COMPLIANCE;
DEVICES;
RRAM;
D O I:
10.1109/LED.2020.2977397
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Through oxygen profile engineering, we fabricated W/AlOx/Al2O3/Pt bilayer memristors with a 250-nm feature size. The AlOx fabricated by sputtering serves as an oxygen vacancy source, whereas the Al2O3 deposited by atomic layer deposition acts as a dominant resistive switching (RS) layer. Our devices show forming-free RS behaviors with high speed (28 ns), uniform resistance distribution, large on/off ratio (similar to 10(3) @100K, similar to 10(3) @298K, and similar to 80@400K), and good retention. Besides, temperature stability with record high endurance from cryogenic to high-temperature (10(8) @100K, 10(10) @298K, and 10(7) @400K) is demonstrated, to the best of our knowledge.
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页码:549 / 552
页数:4
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