Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor

被引：75
|
作者：
Huang, Xiao-Di [1 ]
Li, Yi [1 ]
Li, Hao-Yang [1 ]
Xue, Kan-Hao [1 ]
Wang, Xingsheng [1 ]
Miao, Xiang-Shui [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 04期
基金：
中国国家自然科学基金;
关键词：
Memristor; resistive switching; bilayer structure; forming-free; thermal stability; SELF-COMPLIANCE; DEVICES; RRAM;
D O I：
10.1109/LED.2020.2977397
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Through oxygen profile engineering, we fabricated W/AlOx/Al2O3/Pt bilayer memristors with a 250-nm feature size. The AlOx fabricated by sputtering serves as an oxygen vacancy source, whereas the Al2O3 deposited by atomic layer deposition acts as a dominant resistive switching (RS) layer. Our devices show forming-free RS behaviors with high speed (28 ns), uniform resistance distribution, large on/off ratio (similar to 10(3) @100K, similar to 10(3) @298K, and similar to 80@400K), and good retention. Besides, temperature stability with record high endurance from cryogenic to high-temperature (10(8) @100K, 10(10) @298K, and 10(7) @400K) is demonstrated, to the best of our knowledge.
引用
收藏
页码：549 / 552
页数：4
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