A laterally driven micromachined resonant pressure sensor

被引:50
|
作者
Welham, CJ
Gardner, JW
Greenwood, J
机构
[1] UNIV WARWICK,DEPT ENGN,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND
[2] DRUCK LTD,LEICESTER LE6 0FH,LEICS,ENGLAND
基金
英国工程与自然科学研究理事会;
关键词
micromachining; polysilicon; resonance; pressure sensors;
D O I
10.1016/0924-4247(96)80130-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new type of resonant pressure sensor is presented which employs a laterally driven resonant strain gauge. The resonant strain gauge is designed using simple linear elastic theory and the sensor fabricated by a combination of bulk- and surface-micromachining techniques. The strain gauge is driven electrostatically and the resultant vibration sensed capacitively. Its lateral mode of oscillation offers several advantages, such as a Q-factor insensitive to the leakage of cavity gases. The resonator has been designed to have a fundamental frequency of 52 kHz and a gauge factor of 60 Hz mu N-1. Preliminary measurements of devices yield a fundamental frequency of 52+/-15 kHz, a Q-factor in air of 50 and a pressure sensitivity of 8.8 kHz bar(-1).
引用
收藏
页码:86 / 91
页数:6
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