GaN Schottky Barrier Photodetectors

被引：9

作者：

Chang, S. J. ^{[1
,2
]}

Wang, S. M. ^{[1
,2
]}

Chang, P. C. ^{[3
]}

Kuo, C. H. ^{[4
]}

Young, S. J. ^{[5
]}

Chen, T. P. ^{[1
,2
]}

Wu, S. L. ^{[6
]}

Huang, B. R. ^{[7
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Dept Elect Engn, Tainan 70101, Taiwan

[3] Kun Shan Univ, Dept Elect Engn, Tainan 710, Taiwan

[4] Natl Cent Univ, Dept Opt & Photon, Tao Yuan 32001, Taiwan

[5] Natl Formosa Univ, Dept Elect Engn, Yunlin 632, Taiwan

[6] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan

[7] Natl Taiwan Univ Sci & Technol, Grad Inst Electroopt Engn, Dept Elect Engn, Taipei 106, Taiwan

来源：

IEEE SENSORS JOURNAL | 2010年 / 10卷 / 10期

关键词：

Nanorod template; noise; photodetector; ultraviolet; LIGHT-EMITTING-DIODES; INGAN-GAN; DETECTORS; MECHANISM; EPITAXY; LAYER; BLUE;

D O I：

10.1109/JSEN.2010.2045889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D*) were 7.00 x 10(-10) W and 2.26 x 10(9) cmHz(0.5)W(-1), respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D* were 3.56 x 10(-6) W and 4.44 x 10(5) cmHz(0.5)W(-1), respectively, for the PD prepared on a conventional sapphire substrate.

引用

页码：1609 / 1614

页数：6

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