Strong Gate Coupling of High-Q Nanomechanical Resonators

被引:38
|
作者
Sulkko, Jaakko [1 ]
Sillanpaa, Mika A. [1 ]
Hakkinen, Pasi [1 ]
Lechner, Lorenz [1 ]
Helle, Meri [1 ]
Fefferman, Andrew [2 ]
Parpia, Jeevak [3 ,4 ]
Hakonen, Pertti J. [1 ]
机构
[1] Aalto Univ, Low Temp Lab, FI-00076 Aalto, Finland
[2] Univ Calif Berkeley, Berkeley, CA 94720 USA
[3] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA
[4] Cornell Univ, LASSP, Ithaca, NY 14853 USA
基金
美国国家科学基金会; 芬兰科学院;
关键词
Nanomechanics; NEMS; quantum limit; detection; dissipation; DAMAGE; STATE;
D O I
10.1021/nl102771p
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The detection of mechanical vibrations near the quantum limit is a formidable challenge since the displacement becomes vanishingly small when the number of phonon quanta tends toward zero An interesting setup for on-chip nanomechanical resonators is that of coupling them to electrical microwave cavities for detection and manipulation Here we show how to achieve a large cavity coupling energy of up to (2 pi) 1 MHz/nm for metallic beam resonators at tens of megahertz We used focused ion beam (FIB) cutting to produce uniform slits down to 10 nm separating patterned resonators from their gate electrodes, in suspended aluminum films We measured the thermomechanical vibrations down to a temperature of 25 mK and we obtained a low number of about 20 phonons at the equilibrium bath temperature The mechanical properties of Al were excellent after FIB cutting and we recorded a quality factor of Q similar to 3 x 10(5) for a 67 MHz resonator at a temperature of 25 mK Between 0 2 and 2 K we find that the dissipation is linearly proportional to the temperature
引用
收藏
页码:4884 / 4889
页数:6
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