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Electrical transport and magnetism in CeFe2Si2 single crystal
被引:11
|作者:
Mihalik, M
Mihalik, M
Sechovsky, V
机构:
[1] Charles Univ, Fac Math, Prague 12116 2, Czech Republic
[2] Charles Univ, Phys Dept Elect Struct, Prague 12116 2, Czech Republic
[3] Slovak Acad Sci, Inst Expt Phys, Kosice 04353, Slovakia
关键词:
CeFe2Si2;
mixed valence;
electric transport;
hall effect;
D O I:
10.1016/j.physb.2005.01.023
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
We report on results of resistivity and Hall effect measurements performed on a CeFe2Si2 single crystal. The resistivity, studied in the temperature range from 2-300 K and in the magnetic fields up to 12 T, was found to be field independent, showing no anomaly and no pronounced anisotropy between a- and c-axis in the temperature dependence. The Hall coefficient increases monotonously with increasing temperature. The normal Hall constant at 2 K is R-H = 3.26 x 10(-9) m(3)/C. The susceptibility of the compound is of the order 10(-8) mol m(-3) and decreases with the increasing temperature. (c) 2005 Elsevier B.V. All rights reserved.
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页码:163 / 165
页数:3
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