Pulsed laser deposition of epitaxial ferroelectric Pb(Zr,Ti)O-3 films on Si(100) substrate

被引：10
|
作者：
Lee, MB
Kawasaki, M
Yoshimoto, M
Koinuma, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 5A期
关键词：
PZT; pulsed laser deposition; heteroepitaxy; seed layer; TiN;
D O I：
10.1143/JJAP.35.L574
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Pb(Zr0.52Ti0.48)O-3 (PZT)/SrTiO3/TiN trilayered films were grown heteroepitaxially on Si(100) substrate by pulsed laser deposition. The TiN layer was employed as a bottom electrode for the PZT capacitor and the thin SrTiO3 layer was used as a seed layer for epitaxial growth of PZT, Good crystallinity and sharp interfaces of the structure were verified by X-ray diffraction analysis and secondary ion mass spectrometry, respectively. Polarization-electric field (P-E) curve showed a remanent polarization of 12 mu C/cm(2) and a coercive field of 130 kV/cm for a PZT film of 400 nm thickness. Leakage current at E = 400 kV/cm was less than 10(-7) A/cm(2).
引用
收藏
页码：L574 / L576
页数：3
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