Simplified SPICE Model of TiO2 Memristor

被引：4
|
作者：
Kolka, Zdenek [1 ]
Biolkova, Viera [1 ]
Biolek, Dalibor [2 ]
机构：
[1] Brno Univ Technol, Dept Radio Elect, Brno, Czech Republic
[2] Brno Univ Technol, Univ Def, Dept Microelect Elect Engn, Brno, Czech Republic
来源：
2015 INTERNATIONAL CONFERENCE ON MEMRISTIVE SYSTEMS (MEMRISYS) | 2015年
关键词：
TiO2; memristor; port equation; state equation; Pickett's model; SPICE; simulation;
D O I：
10.1109/MEMRISYS.2015.7378384
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents a SPICE implementation of a behavioral model of the TiO2 memristor which is equivalent to the Pickett model, but it is easier to simulate with respect to convergence and matrix size. The proposed port equation approximates the Simmons model of tunneling barrier. The state equation has been modified in order to prevent exponential overflows during simulation. A full PSpice netlist is provided.
引用
收藏
页数：2
相关论文
共 50 条
  • [31] Parasitic Memcapacitor Effects on HP TiO2 Memristor Dynamics
    Shen, Yiran
    Wang, Guangyi
    Liang, Yan
    Yu, Simin
    Iu, Herbert Ho-ching
    IEEE ACCESS, 2019, 7 : 59825 - 59831
  • [32] Research on a chaotic circuit based on an active TiO2 memristor
    Wang, Wei
    Wang, Guangyi
    Wang, Xiaoyuan
    SYSTEMS SCIENCE & CONTROL ENGINEERING, 2014, 2 (01): : 740 - 744
  • [33] Effect of the thickness of the TiOx/TiO2 layers on their memristor properties
    Emel'yanov, A. V.
    Demin, V. A.
    Antropov, I. M.
    Tselikov, G. I.
    Lavrukhina, Z. V.
    Kashkarov, P. K.
    TECHNICAL PHYSICS, 2015, 60 (01) : 112 - 115
  • [34] Polymer/TiO2 Nanorod Nanocomposite Optical Memristor Device
    Jaafar, A. H.
    Al Chawa, M. M.
    Cheng, F.
    Kelly, S. M.
    Picos, R.
    Tetzlaff, R.
    Kemp, N. T.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2021, 125 (27): : 14965 - 14973
  • [35] Modeling of TiO2 memristor: from analytic to numerical analyses
    Biolek, Dalibor
    Biolek, Zdenek
    Biolkova, Viera
    Kolka, Zdenek
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (12)
  • [36] Effect of the thickness of the TiOx/TiO2 layers on their memristor properties
    A. V. Emel’yanov
    V. A. Demin
    I. M. Antropov
    G. I. Tselikov
    Z. V. Lavrukhina
    P. K. Kashkarov
    Technical Physics, 2015, 60 : 112 - 115
  • [37] Effects of heavy ion bombardment on TiO2 memristor operation
    Marjanovic, Nada
    Vujisic, Milos
    Stankovic, Koviljka
    Osmokrovic, Predrag
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2011, 166 (01): : 1 - 7
  • [38] Fabrication and Electrical Characterization of Memristor with TiO2 as an Active Layer
    Tripathi, S. K.
    Kaur, Ramneek
    Kaur, Harpreet
    Rani, Mamta
    Kaur, Jagdish
    Kaur, Harmandeep
    PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON CONDENSED MATTER PHYSICS 2014 (ICCMP 2014), 2015, 1661
  • [39] Influence of the Thickness of TiO2/TiO2-x Layers on the Behavior of a Memristor Device
    Kim, Han-Sang
    Kim, Sung-Jin
    KOREAN JOURNAL OF METALS AND MATERIALS, 2019, 57 (02): : 84 - 90
  • [40] A New Simplified Model for HfO2-based Memristor
    Mladenov, Valeri
    2019 8TH INTERNATIONAL CONFERENCE ON MODERN CIRCUITS AND SYSTEMS TECHNOLOGIES (MOCAST), 2019,
12345