Simplified SPICE Model of TiO2 Memristor

被引:4
|
作者
Kolka, Zdenek [1 ]
Biolkova, Viera [1 ]
Biolek, Dalibor [2 ]
机构
[1] Brno Univ Technol, Dept Radio Elect, Brno, Czech Republic
[2] Brno Univ Technol, Univ Def, Dept Microelect Elect Engn, Brno, Czech Republic
关键词
TiO2; memristor; port equation; state equation; Pickett's model; SPICE; simulation;
D O I
10.1109/MEMRISYS.2015.7378384
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The paper presents a SPICE implementation of a behavioral model of the TiO2 memristor which is equivalent to the Pickett model, but it is easier to simulate with respect to convergence and matrix size. The proposed port equation approximates the Simmons model of tunneling barrier. The state equation has been modified in order to prevent exponential overflows during simulation. A full PSpice netlist is provided.
引用
收藏
页数:2
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