Magnetization and magnetoresistance of a spin valve

被引：4
|
作者：
Bebenin, N. G. [1 ]
Ustinov, V. V. [1 ]
机构：
[1] Russian Acad Sci, Inst Met Phys, Ural Branch, Ekaterinburg 620990, Russia
来源：
PHYSICS OF METALS AND METALLOGRAPHY | 2015年 / 116卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
spin valve; magnetization; magnetoresistance; hysteresis; FREE LAYER; REVERSAL;
D O I：
10.1134/S0031918X15020039
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
Hysteresis of magnetization and magnetoresistance caused by a change in the orientation of the free layer of a spin valve has been investigated theoretically. It has been shown that the width of the hysteresis loop determined from the data on the dependence of the magnetic moment of the valve on the magnetic field can be less than the width of the loop determined from the resistive data. Formulas have been obtained that describe the dependence of the width of the hysteresis loop on the magnetic field at various values of the exchange field acting on the free layer.
引用
收藏
页码：170 / 174
页数：5
相关论文
共 50 条
  • [21] Universal relationship between giant magnetoresistance and anisotropic magnetoresistance in spin valve multilayers
    Miller, BH
    Stojkovic, BP
    Dahlberg, ED
    PHYSICS LETTERS A, 1999, 256 (04) : 294 - 298
  • [22] The origin of dispersion of magnetoresistance of a domain wall spin valve
    Sato, Jun
    Matsushita, Katsuyoshi
    Imamura, Hiroshi
    INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009), 2010, 200
  • [23] Observation of giant magnetoresistance in a Heusler alloy spin valve
    Johnson, PR
    Kautzky, MC
    Mancoff, FB
    Kondo, R
    Clemens, BM
    White, RL
    IEEE TRANSACTIONS ON MAGNETICS, 1996, 32 (05) : 4615 - 4617
  • [24] Giant magnetoresistance in IrMn based antiferromagnetic spin valve
    Jia Xing-Tao
    Xia Ke
    ACTA PHYSICA SINICA, 2011, 60 (12)
  • [25] Effect of thermal stability on magnetoresistance in NiO spin valve
    Zhang, A.M., 1600, American Institute of Physics Inc. (95):
  • [26] Effect of thermal stability on magnetoresistance in NiO spin valve
    Zhang, AM
    Wu, XS
    Sun, L
    Sheng, WT
    You, B
    Du, J
    Lu, M
    Hu, A
    Jiang, SS
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) : 7294 - 7296
  • [27] Planar Hall effect and magnetoresistance in spin valve multilayers
    Lu, ZQ
    Pan, G
    Li, J
    Lai, WY
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 7215 - 7217
  • [28] Magnetoresistance in an All-Organic-Based Spin Valve
    Li, Bin
    Kao, Chi-Yueh
    Yoo, Jung-Woo
    Prigodin, Vladimir N.
    Epstein, Arthur J.
    ADVANCED MATERIALS, 2011, 23 (30) : 3382 - +
  • [29] Strain effects on anisotropic magnetoresistance in a nanowire spin valve
    Hossain, Md I.
    Maksud, M.
    Subramanian, A.
    Atulasimha, J.
    Bandyopadhyay, S.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (45) : 1 - 8
  • [30] Large magnetoresistance of MnBi/Si/MnBi spin valve
    Tarawneh, Khaldoun
    Al-Aqtash, Nabil
    Sabirianov, Renat
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2014, 363 : 43 - 48
12345