Bottom-up Photonic Crystal Lasers

被引：106

作者：

Scofield, Adam C. ^{[1
,2
]}

Kim, Se-Heon ^{[3
,4
]}

Shapiro, Joshua N. ^{[1
,2
]}

Lin, Andrew ^{[1
,2
]}

Liang, Baolai ^{[1
,2
]}

Scherer, Axel ^{[3
,4
]}

Huffaker, Diana L. ^{[1
,2
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

[3] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA

[4] CALTECH, Kavli Nanosci Inst, Pasadena, CA 91125 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 12期

基金：

美国国家科学基金会;

关键词：

Nanopillar; nanowire; photonic crystal laser; low threshold; NANOWIRES; MODES; SLAB;

D O I：

10.1021/nl2030163

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The directed growth of III-V nanopillars is used to demonstrate bottom-up photonic crystal lasers. Simultaneous formation of both the photonic band gap and active gain region is achieved via catalyst-free selective-area metal-organic chemical vapor deposition on masked GaAs substrates. The nanopillars implement a GaAs/InGaAs/GaAs axial double heterostructure for accurate, arbitrary placement of gain within the cavity and lateral InGaP shells to reduce surface recombination. The lasers operate single-mode at room temperature with low threshold peak power density of similar to 625 W/cm(2). Cavity resonance and lasing wavelength is lithographically defined by controlling pillar pitch and diameter to vary from 960 to 989 nm. We envision this bottom-up approach to pillar-based devices as a new platform for photonic systems integration.

引用

页码：5387 / 5390

页数：4

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