Impulse Based Range-Gated UWB Wireless Transceiver IC in 90nm CMOS for Medical Sensing Applications and Communications

被引:0
|
作者
Wang, X. [1 ]
Dinh, A. [1 ]
Teng, D. [1 ]
Chen, L. [1 ]
Ko, S. B. [1 ]
Shi, Y. [2 ]
Basran, J. [3 ]
Dal Bello-Hass, V. [4 ]
机构
[1] Univ Saskatchewan, Dept Elect & Comp Engn, Saskatoon, SK S7N 0W0, Canada
[2] Univ Saskatchewan, Dept Engn Mech, Saskatoon, SK S7N 0W0, Canada
[3] Univ Saskatchewan, Fac Med, Saskatoon, SK S7N 0W0, Canada
[4] Univ Saskatchewan, Sch Phy Therapy, Saskatoon, SK S7N 0W0, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
CMOS; ultra-wide band (UWB); transceiver; radar sensing; wireless; rang gate;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents a new impulse based ultra-wide band (UWB) transceiver system designed in 90nm CMOS technology for UWB medical radar sensing and communication applications. The design is targeting for human heart motion detection and short range data communications. The transmitter is composed of a simple on-off keying (OOK) modulated impulse generator and a variable gain-controlled amplifier (VGA) at the transmitter. The generated pulse width can be adjusted. The receiver operating in the radar mode is composed of a simple low noise amplifier, a mixer, and an analog-to-digital converter operating in the radar mode. The range gate control design allows the receiver gather maximum power reflection from the objects within the expected range and minimizes the noise. The proposed impulse based UWB transceiver works under a 1.2V power supply and the transmitter provides an output transmitting pulses of 300mV to 50 Omega load. The fully integrated UWB transceiver occupies a core area of 0.3mm(2). The transceiver works in UWB band of 3.1-6GHz and consumes an average power of 5.32mW and 12.69mW for simulations of radar sensing and communications, respectively.
引用
收藏
页码:194 / +
页数:2
相关论文
共 29 条
  • [21] Development of a Self-Correcting CMOS-Based Clock Generator for Wireless Sensor Network in 90nm Process Technology
    Avelino, Anne Loraine L.
    Precilla, Carl Vincent S.
    Se, Lenette S.
    Santos, Adonis S.
    Malabanan, Francis A.
    Tabing, Jay Nickson T.
    Gevana, Sherryl M.
    PROCEEDINGS OF TENCON 2018 - 2018 IEEE REGION 10 CONFERENCE, 2018, : 2340 - 2345
  • [22] Wide Tuning Range Millimeter-Wave VCOs Based on Switchable Inductive Tuning Methodology in 90nm CMOS Technology
    Huang, Tzuen-Hsi
    You, Pen-Li
    Chiu, Chen-Hao
    Wu, Chen-Yu
    2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2014, : 576 - 579
  • [23] A Wireless-Powered IR-UWB Transmitter for Long-Range Passive RFID Tags in 90-nm CMOS
    Lee, Kin Keung
    Lande, Tor Sverre
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2014, 61 (11) : 870 - 874
  • [24] A Low Power, High Data Rate IR-UWB Pulse Generator with BPSK Modulation in 90nm CMOS Technology for On-Chip Wireless Interconnects
    Karim, Mohammad Nahidul
    Hossain, S. M. Istiaque
    Saha, Pran Kanai
    2012 INTERNATIONAL CONFERENCE ON INFORMATICS, ELECTRONICS & VISION (ICIEV), 2012, : 87 - 90
  • [25] A 2Gbps RF-Correlation-Based Impulse-Radio UWB Transceiver Front-End in 130nm CMOS
    Zhou, Lei
    Chen, Zhiming
    Wang, Chun-Cheng
    Tzeng, Fred
    Jain, Vipul
    Heydari, Payam
    RFIC: 2009 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2009, : 55 - 58
  • [26] A 14-bit Extended-Range Incremental ΣΔ ADC Matlab-Model based on 90nm CMOS-Technology
    Cavallo, D.
    De Matteis, M.
    Ronchi, M.
    Guidetti, E.
    Leggeri, G.
    Baschirotto, A.
    2013 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT), 2013, : 143 - 146
  • [27] A 3-14 GHz, Self-Body Biased Common-Gate UWB LNA for Wireless Applications in 90 nm CMOS
    Singh, Vikram
    Arya, Sandeep Kumar
    Kumar, Manoj
    JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2019, 28 (04)
  • [28] A 2.5-GHz Band Low-Voltage Class-E Power Amplifier IC for Short-Range Wireless Communications in 180-nm CMOS
    Xu, Xiao
    Sun, Zheng
    Xu, Kangyang
    Yang, Xin
    Kurniawan, Taufiq
    Yoshimasu, Toshihiko
    2014 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT): SILICON TECHNOLOGY HEATS UP FOR THZ, 2014,
  • [29] A 45 nm RFSOI CMOS-based 24.25-29.5 GHz 2x16-Channel Phased-Array Transceiver IC for 5G NR Applications
    Lee, Jooseok
    Baek, Seungjae
    Kim, Kihyun
    Park, Seungwon
    Oh, Hansik
    Kim, Taewan
    Jung, Joonho
    Kim, Jinhyun
    Jeon, Sehyug
    Park, Jee Ho
    Lee, Woojae
    Park, Jaehong
    Lee, Dong-hyun
    Lee, Sangho
    Lee, Jeong Ho
    Kim, Ji Hoon
    Kim, Younghwan
    Park, Sangyong
    Suh, Bohee
    Oh, Soyoung
    Lee, Dongsoo
    Son, Juho
    Yang, Sung-gi
    2024 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, RFIC 2024, 2024, : 47 - 50