A Low Band Cellular Terminal Antenna Impedance Tuner in 130nm CMOS-SOI Technology

被引：0

作者：

Lindstrand, Jonas ^{[1
]}

Vasilev, Ivaylo ^{[1
]}

Sjoland, Henrik ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

来源：

PROCEEDINGS OF THE 40TH EUROPEAN SOLID-STATE CIRCUIT CONFERENCE (ESSCIRC 2014) | 2014年

关键词：

CMOS; Silicon-on-insulator (SOT); Impedance matching; Impedance tuner; Switches; PERFORMANCE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a low band antenna impedance tuner in 130nm CMOS-SOI technology. It consists of three digitally controlled switched capacitor banks and two off-chip inductors and is intended for use in terminals supporting modern cellular standards like WCDMA and LTE. By using a negative gate bias in the off state, linearity can be improved and maintained. Measurements show an 01P3 exceeding +55dBm for all measured impedance states, which cover a VSWR of up to 5.4. The measured minimum loss is ldB or lower in the frequency range from 700-900MHz with spurious emissions below -30dBm at +33dBm input power. The switched capacitors are implemented with eight stacked transistors to yield a voltage handling of at least 20V, and in order to handle the large voltages custom designed capacitors are used.

引用

页码：459 / 462

页数：4

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